Title :
Effect of CVD-SiO2 film on reliability of GaAs MESFET with Ti/Pt/Au gate metal
Author :
Saito, Yoshihiro ; Hashinaga, Tatsuya ; Nakajima, Shigeru
Author_Institution :
Transmission Device R&D Lab, Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
3/1/2005 12:00:00 AM
Abstract :
The effect of CVD-SiO2 films on the reliability of GaAs MESFET with Ti/Pt/Au gate metal was investigated. It was found that the mean time to failure (MTTF) of MESFET with 350°C-depositied SiO2 was only about one-seventh of that of the ones with 440°C-SiO2. It was also found that, in the storage test at 300°C for 24 hours, diffusion of Pt into GaAs was accelerated when the SiO2 deposition temperature was lower than 380°C. FT-IR spectra indicated that the lower deposition temperature leads to a higher concentration of the residual hydrogen in SiO2. Thermal differential spectrometry (TDS) demonstrated that hydrogen in SiO2 could migrate even below 300°C. In conclusion, the residual hydrogen in SiO2 causes the degradation phenomena.
Keywords :
CVD coatings; Fourier transform spectra; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gold; infrared spectra; insulating thin films; plasma CVD; platinum; semiconductor device reliability; silicon compounds; titanium; 350 C; 380 C; 440 C; CVD; FTIR spectra; GaAs; MESFET; MTTF; SiO2; Ti-Pt-Au; Ti/Pt/Au gate metal; burn-in test; degradation phenomena; gate metal; mean time to failure; metal-semiconductor FET; plasma enhanced chemical vapor deposition; reliability; residual hydrogen; thermal differential spectrometry; Fabrication; Failure analysis; Gallium arsenide; Gold; Hydrogen; Life estimation; MESFETs; Plasma temperature; Silicon compounds; Testing; Burn-in test; CVD; GaAs MESFET; Ti/Pt/Au gate; hydrogen; reliability;
Journal_Title :
Reliability, IEEE Transactions on
DOI :
10.1109/TR.2004.837318
