The effects of a dielectric capacitor layer and metallization on the propagation parameters of coplanar waveguide for MMIC

Author

Delrue, R. ; Seguinot, C. ; Pribetich, P. ; Kennis, P.

Author_Institution

Univ. des Sci. et Tech. de Lille, Flandres Artois, Villeneuve d´´Ascq, France

Volume

36

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1285

Lastpage

1288

Abstract

The study of coupling phenomena between lines laid on semiconductor substrates in monolithic microwave integrated circuit (MMIC) technologies and the determination of propagation effects on power FETs require the characterization of lines with micron transversal widths. For such lines, the influence of metallization thickness and dielectric cap layer on propagation properties can not be neglected. These effects are characterized for the case of coplanar lines laid on semiconductor substrates. The mathematical development used and the results obtained by a numerical technique are presented

Keywords

guided electromagnetic wave propagation; metallisation; microwave integrated circuits; monolithic integrated circuits; waveguide theory; MMIC; characterization; coplanar waveguide; coupling phenomena; dielectric capacitor layer; metallization thickness; micron transversal widths; monolithic microwave integrated circuit; numerical technique; power FETs; propagation parameters; semiconductor substrates; Capacitors; Coupling circuits; Dielectric substrates; Integrated circuit technology; MMICs; Metallization; Microwave FET integrated circuits; Microwave integrated circuits; Microwave propagation; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3671

Filename

3671