Abstract :
Thanks to refined techniques of material growth, circuits based on Si-Ge devices have made their way to market and bode especially well for wireless communications. The author reviews material properties, HBT technologies and circuit applications
Keywords :
Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor growth; semiconductor materials; HBT technologies; Si-Ge heterojunction bipolar technology; SiGe; circuit applications; high speed chips; material growth; material properties; ring oscillator; wireless communications; Capacitive sensors; Chemical vapor deposition; Cutoff frequency; Germanium silicon alloys; Heterojunctions; Lattices; Photonic band gap; Semiconductor films; Silicon germanium; Transistors;
