Title :
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
Author :
Harame, D.L. ; Comfort, J.H. ; Cressler, J.D. ; Crabbè, E.F. ; Sun, J.Y.-C. ; Meyerson, B.S. ; Tice, T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; silicon; 12 bit; HBT BiCMOS process; Si-SiGe; Si/SiGe; analog circuit design; digital-to-analog converter; epitaxial-base transistors; nonself-aligned device structures; process integration; self-aligned device structures; Application specific integrated circuits; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Microelectronics; Paper technology; Senior members; Silicon germanium; Sun;
Journal_Title :
Electron Devices, IEEE Transactions on
