DocumentCode
1246763
Title
An analytical transient model for a 1.5 V BiCMOS dynamic logic circuit for low-voltage deep submicrometer BiCMOS VLSI
Author
Chiang, C.S. ; Kuo, J.B.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
42
Issue
3
fYear
1995
fDate
3/1/1995 12:00:00 AM
Firstpage
549
Lastpage
554
Abstract
This paper presents an analytical transient model for the 1.5 V BiCMOS dynamic logic circuit using Gummel-Poon charge control model for deep submicrometer BiCMOS VLSI. Based on the analysis, the switching time of the 1.5 V BiCMOS dynamic circuit is sensitive to the forward transit time with a large load capacitance. With a small load capacitance, its switching time is related to the threshold voltage
Keywords
BiCMOS digital integrated circuits; BiCMOS logic circuits; VLSI; integrated circuit modelling; transient analysis; 1.5 V; BiCMOS dynamic logic circuit; Gummel-Poon charge control model; VLSI; analytical transient model; forward transit time; load capacitance; low-voltage deep submicrometer BiCMOS; switching time; threshold voltage; Analytical models; BiCMOS integrated circuits; CMOS logic circuits; Capacitance; Logic circuits; Semiconductor device modeling; Switches; Switching circuits; Transient analysis; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.368053
Filename
368053
Link To Document