Title :
A versatile half-micron complementary BiCMOS technology for microprocessor-based smart power applications
Author :
Tsui, Paul G Y ; Gilbert, Percy V. ; Sun, Shih-Wei
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
A modular, high density 0.5 μm Complementary BiCMOS technology with integrated high-voltage Lateral Diffused MOS (LDMOS) and conductivity modulated Lateral Insulated Gate Bipolar Transistor (LIGBT) structures designed for high performance, multi-functional integrated circuit applications is described. The advantages of VLSI processing and 0.5 μm compatible layout rules have been applied to the design and fabrication of the tight-pitch high-voltage devices without sacrificing the performance of 0.5 μm dual-poly (N+/P+) gate CMOS and complementary vertical bipolar transistors. Single chip integration of VLSI microprocessors with high-voltage and/or high-current input and output functions for “Smart Power” applications can be achieved using this technology
Keywords :
BiCMOS integrated circuits; VLSI; integrated circuit technology; power integrated circuits; 0.5 micron; VLSI processing; conductivity modulated lateral insulated gate bipolar transistor; half-micron complementary BiCMOS technology; high-voltage lateral diffused MOS; layout rules; microprocessor-based smart power applications; multi-functional integrated circuit applications; tight-pitch high-voltage devices; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar integrated circuits; Bipolar transistors; CMOS process; Conductivity; Fabrication; Insulated gate bipolar transistors; Integrated circuit technology; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
