• DocumentCode
    1246772
  • Title

    Improved circuit technique to reduce hfe degradation in bipolar output drivers

  • Author

    Kizilyalli, Isik C. ; McAndrew, Colin C.

  • Author_Institution
    AT&T Bell Labs., Allentown, PA, USA
  • Volume
    42
  • Issue
    3
  • fYear
    1995
  • fDate
    3/1/1995 12:00:00 AM
  • Firstpage
    573
  • Lastpage
    574
  • Abstract
    hfe degradation in bipolar transistors caused by reverse Vbe stress decreases the reliability of BiCMOS circuits. In this paper, we present an improved circuit technique to limit reverse Vbe, and thus significantly increase BiCMOS reliability. The technique also reduces the base-emitter breakdown voltage constraint on BiCMOS technology design
  • Keywords
    BiCMOS integrated circuits; integrated circuit design; integrated circuit measurement; integrated circuit reliability; BiCMOS circuits; base-emitter breakdown voltage constraint; bipolar output drivers; circuit technique; common emitter forward current gain; reliability; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Degradation; Driver circuits; Hafnium; Iron; MOSFETs; Stress; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.368058
  • Filename
    368058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1246772