DocumentCode
1247029
Title
10 kV IGCTs
Author
Bernet, Steffen ; Carroll, Eric ; Streit, Peter ; Apeldoorn, Oscar ; Steimer, Peter ; Tschirley, Sven
Volume
11
Issue
2
fYear
2005
Firstpage
53
Lastpage
61
Abstract
This article describes the requirements, semiconductor design, and the characteristics of the first 10-kV integrated gate commutated thyristors (IGCT) for 6- to 7.2 kV, three-level NPC voltage source converters. It is shown that the use of 10-kV IGCTs enables the reduction of the total number of the main power components and also the reliability of the converter is increased. Finally the tradeoff curve and concept specifications of 10-kV IGCTs are presented.
Keywords
commutation; reliability; thyristor convertors; 10 kV; 6 to 7.2 kV; concept specifications; converter reliability; integrated gate commutated thyristors; semiconductor design; three-level NPC voltage source converters; tradeoff curve; Converters; Medium voltage; Power conversion; Rail transportation; Semiconductor diodes; Semiconductor optical amplifiers; Stability; Switches; Topology; Voltage control;
fLanguage
English
Journal_Title
Industry Applications Magazine, IEEE
Publisher
ieee
ISSN
1077-2618
Type
jour
DOI
10.1109/MIA.2005.1405827
Filename
1405827
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