DocumentCode
1247340
Title
Device characterization for distortion prediction including memory effects
Author
Brinkhoff, James ; Parker, Anthony E.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
15
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
171
Lastpage
173
Abstract
A low-frequency nonlinear two-port characterization system is described and methods are developed to allow the automatic extraction of device and circuit parameters necessary for intermodulation prediction including memory effects. Nonlinear characterization has been achieved up to fifth-order.
Keywords
amplifiers; field effect transistors; intermodulation distortion; nonlinear network analysis; circuit parameter extraction; device characterization; device parameter extraction; distortion prediction; field effect transistor amplifiers; intermodulation prediction; low-frequency nonlinear two-port characterization; memory effects; nonlinear characterization; Circuits; Data mining; Distortion measurement; Dynamic range; FETs; Frequency measurement; Nonlinear distortion; Predictive models; Pulse measurements; Voltage; Field effect transistor (FET) amplifiers; intermodulation distortion; memory effects;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2005.844215
Filename
1406066
Link To Document