Title :
Device characterization for distortion prediction including memory effects
Author :
Brinkhoff, James ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
fDate :
3/1/2005 12:00:00 AM
Abstract :
A low-frequency nonlinear two-port characterization system is described and methods are developed to allow the automatic extraction of device and circuit parameters necessary for intermodulation prediction including memory effects. Nonlinear characterization has been achieved up to fifth-order.
Keywords :
amplifiers; field effect transistors; intermodulation distortion; nonlinear network analysis; circuit parameter extraction; device characterization; device parameter extraction; distortion prediction; field effect transistor amplifiers; intermodulation prediction; low-frequency nonlinear two-port characterization; memory effects; nonlinear characterization; Circuits; Data mining; Distortion measurement; Dynamic range; FETs; Frequency measurement; Nonlinear distortion; Predictive models; Pulse measurements; Voltage; Field effect transistor (FET) amplifiers; intermodulation distortion; memory effects;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.844215
