Small-signal and high-frequency noise modeling of SiGe HBTs

Author

Basaran, Umut ; Wieser, Nikolai ; Feiler, Gernot ; Berroth, Manfred

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany

Volume

53

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

919

Lastpage

928

Abstract

An improved and complete method for the small-signal and high-frequency noise modeling of SiGe HBTs in a BiCMOS process is presented. A comprehensive survey of the suggested parameter-extraction methodology for the SiGe HBT transistor model in conjunction with the analytically derived equations is given. The suggested transistor model is compatible with BiCMOS processes and takes into account the parasitic effects like the extrinsic capacitances and substrate effect. The accuracy of the proposed transistor model is verified by on-wafer S-parameter measurements up to 40 GHz. An important proof of the accuracy of the proposed parameter-extraction methodology is the presented physical noise model that can accurately predict the measured noise parameters up to our measurement frequency limit of 18 GHz. The noise model accuracy at various temperatures and biases is examined. Finally, the effect of the on-wafer contact pads on the noise performance of the transistor is investigated in detail.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; S-parameters; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; BiCMOS process; SiGe; SiGe HBT; extrinsic capacitance; high frequency noise modeling; noise parameters; parameter extraction methodology; parasitic effects; small signal noise modeling; substrate effect; wafer S-parameter measurement; wafer contact pads; BiCMOS integrated circuits; Equations; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Parasitic capacitance; Predictive models; Scattering parameters; Silicon germanium; BiCMOS; SiGe HBT; high-frequency noise modeling; noise parameters; parameter extraction;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.842490

Filename

1406286