DocumentCode
1247644
Title
740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density
Author
Lutti, J. ; Smowton, P.M. ; Lewis, G.M. ; Krysa, A.B. ; Roberts, Jeffrey S. ; Houston, P.A. ; Xin, Y.C. ; Li, Yuhua ; Lester, L.F.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., UK
Volume
41
Issue
5
fYear
2005
fDate
3/3/2005 12:00:00 AM
Firstpage
247
Lastpage
248
Abstract
InP quantum-dot lasers grown on GaAs substrates and emitting in the 730-740 nm band with threshold current density as low as 190 A cm/sup -2/ for a 2000 /spl mu/m-long device with uncoated facets are reported.
Keywords
III-V semiconductors; current density; gallium compounds; indium compounds; quantum dot lasers; 2000 micron; 740 nm; GaAs; GaAs substrates; InP; InP/GaInP quantum-dot laser; room temperature threshold current density; self-assembled quantum dots; uncoated facets;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057201
Filename
1406577
Link To Document