DocumentCode
1247666
Title
Direct measurements of frequency response of carbon nanotube field effect transistors
Author
Singh, D.V. ; Jenkins, Keith A. ; Appenzeller, J.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
41
Issue
5
fYear
2005
fDate
3/3/2005 12:00:00 AM
Firstpage
280
Lastpage
282
Abstract
The frequency response of a carbon nanotube field effect transistor (CNFET) biased in the common-source and common-gate configurations has been measured up to 200 MHz for the first time using a direct measurement technique. In this frequency range there is no observed degradation in the measured AC response of the CNFET. The effect of parasitic capacitance on the measurement has been identified and based on a simple model; it is estimated that this approach can be extended well into the Gigahertz range. This is the only demonstrated method of directly characterising the frequency response of nanoscale devices where the signal levels are below the noise floor of conventional network analysers.
Keywords
carbon nanotubes; field effect transistors; frequency response; nanotube devices; semiconductor device measurement; 200 MHz; AC response; C; CNFET; carbon nanotube FET; common-gate configuration biasing; common-source configuration biasing; frequency response direct measurement; nanoscale devices; parasitic capacitance; response of carbon nanotube field effect transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057528
Filename
1406599
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