Title :
Optimising intrinsic performance of InAlAs/InGaAs Y-branch junction for nonlinear RF operation
Author :
Rashmi, L. ; Bednarz, L. ; Huynen, Isabelle
Author_Institution :
Microwave Lab.-EMIC, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fDate :
3/3/2005 12:00:00 AM
Abstract :
A technique is proposed to optimise the bias conditions of a InAlAs/InGaAs based Y-branch junction (YBJ), based on the DC performance, to obtain the functionality of a microwave rectifier and frequency multiplier, specifically a doubler at room temperature. Results offer significant insight into performance prediction and optimisation of YBJs for RF applications.
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; indium compounds; microwave devices; microwave frequency convertors; solid-state rectifiers; 300 K; InAlAs-InGaAs; Y-branch junction; YBJ; bias conditions optimization; microwave frequency multiplier; microwave rectifier; nonlinear RF operation; room temperature operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057885
