Title :
Microring Resonator Wavelength Tunable Filter Using Five-Layer Asymmetric Coupled Quantum Well
Author :
Makino, Taro ; Gotoh, Tsuyoshi ; Hasegawa, Ryo ; Arakawa, Taro ; Kokubun, Yasuo
Author_Institution :
Nippon Ericsson K.K., Tokyo, Japan
Abstract :
We propose and demonstrate a semiconductor single microring resonator wavelength tunable filter utilizing InGaAs/InAlAs five-layer asymmetric coupled quantum wells for a fast low-power operation. A directional coupler with a shallow gap is used for coupling between busline and microring waveguides to control precisely the coupling efficiency. A wafer is grown by molecular beam epitaxy, and the waveguides are fabricated by two-step inductively coupled plasma reactive ion etching. The resonant wavelength shift of 0.9 nm is obtained under the reverse bias of 13 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; micro-optomechanical devices; micromechanical resonators; molecular beam epitaxial growth; optical control; optical directional couplers; optical fabrication; optical filters; optical resonators; optical tuning; optical waveguides; semiconductor quantum wells; spectral line shift; sputter etching; InGaAs-InAlAs; asymmetric coupled quantum wells; directional coupler; low-power operation; microring waveguides; molecular beam epitaxy; resonant wavelength shift; semiconductor single microring resonator; shallow gap; two-step inductively coupled plasma reactive ion etching; voltage 13 V; wavelength tunable filter; Absorption; Couplings; Indexes; Indium gallium arsenide; Resonator filters; Tuning; Electrorefractive index change; InGaAs; microring resonator; quantum well; wavelength tunable filter;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2011.2159775
