• DocumentCode
    1247863
  • Title

    Timing Jitter Characterization of a Free-Running SESAM Mode-locked VECSEL

  • Author

    Wittwer, V.J. ; Zaugg, C.A. ; Pallmann, W.P. ; Oehler, A.E.H. ; Rudin, B. ; Hoffmann, M. ; Golling, M. ; Barbarin, Y. ; Südmeyer, T. ; Keller, U.

  • Author_Institution
    Dept. of Phys., ETH Zurich, Zurich, Switzerland
  • Volume
    3
  • Issue
    4
  • fYear
    2011
  • Firstpage
    658
  • Lastpage
    664
  • Abstract
    We present timing jitter measurements of an InGaAs quantum well vertical external cavity surface emitting laser (VECSEL) passively mode locked with a quantum dot semiconductor saturable absorber mirror (SESAM) at 2-GHz repetition rate. It generates 53-mW average output power in 4.6-ps pulses at 953 nm. The laser housing was optimized for high mechanical stability to reduce acoustic noise. We use a fiber-coupled multimode 808-nm pump diode, which is mounted inside the laser housing. No active cavity length stabilization is employed. The phase noise of the free-running laser integrated over a bandwidth from 100 Hz to 1 MHz corresponds to an RMS timing jitter of ≈212 fs, which is lower than previously obtained for mode-locked VECSELs. This clearly confirms the superior noise performance expected from a high-Q-cavity semiconductor laser. In contrast to edge-emitting semiconductor diode lasers, the cavity mode is perpendicular to the quantum well gain layers, which minimizes complex dispersion and nonlinear dynamics.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical dispersion; optical saturable absorption; quantum well lasers; semiconductor lasers; semiconductor quantum dots; surface emitting lasers; timing jitter; InGaAs; edge-emitting semiconductor diode lasers; fiber-coupled multimode diode; free-running SESAM mode-locked VECSEL; free-running laser; frequency 100 Hz to 1 MHz; frequency 2 GHz; high-Q-cavity semiconductor laser; laser housing; power 53 mW; quantum dot semiconductor saturable absorber mirror; quantum well gain layers; quantum well vertical external cavity surface emitting laser; time 212 fs; time 4.6 ps; timing jitter measurements; wavelength 808 nm; wavelength 953 nm; Laser mode locking; Laser noise; Timing jitter; Vertical cavity surface emitting lasers; Photon sources; diode-pumped lasers; infrared lasers; mode-locked lasers; semiconductor lasers; ultrafast lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2011.2160050
  • Filename
    5893899