DocumentCode :
1247956
Title :
Effects of Homogeneous and Inhomogeneous Broadening on the Dynamics of Tunneling Injection Quantum Dot Lasers
Author :
Gready, David ; Eisenstein, Gadi
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
47
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
944
Lastpage :
949
Abstract :
We present a comprehensive model of a tunneling injection quantum dot laser. The spatially resolved model incorporates homogeneous and inhomogeneous gain broadenings, both of which are found to be important. The tunneling injection improves dynamical properties as a result of an efficient carrier injection into the laser state and also because of an effective lowering of the carrier temperature. The lower temperature yields lower carrier densities, which reduces scattering and hence narrows the homogeneous linewidth, improving the modulation response. The inhomogeneous broadening is naturally found to deteriorate the modulation response.
Keywords :
carrier density; optical modulation; quantum dot lasers; spectral line broadening; carrier density; carrier injection; carrier temperature; inhomogeneous gain broadenings; laser state; optical modulation; spatially resolved model; spectral linewidth; tunneling injection quantum dot lasers; Charge carrier processes; Energy states; Modulation; Nonhomogeneous media; Semiconductor lasers; Stationary state; Tunneling; Carrier dynamics; homogeneous broadening; inhomogeneous broadening; quantum dots; semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2134835
Filename :
5895000
Link To Document :
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