DocumentCode :
1248191
Title :
A Method to Estimate the Junction Temperature of Photodetectors Operating at High Photocurrent
Author :
Chen, Hao ; Beling, Andreas ; Pan, Huapu ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume :
45
Issue :
12
fYear :
2009
Firstpage :
1537
Lastpage :
1541
Abstract :
A method to estimate the junction temperature while operating at high photocurrent levels is presented. The relative responsivity change is measured at high operating current. Using a model for the temperature-dependence of the bandgap, a relation between the relative change in the output power and the internal junction temperature is derived. Good agreement between experimental data and simulations is achieved.
Keywords :
photodetectors; photodiodes; junction temperature estimation; photodetectors; photodiodes; relative responsivity change; Bandwidth; Extraterrestrial measurements; Photoconductivity; Photodetectors; Photodiodes; Power generation; Radio frequency; Temperature sensors; Voltage; Wavelength measurement; InGaAs; photodetector; photodiode (PD);
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2023609
Filename :
5308579
Link To Document :
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