• DocumentCode
    1248382
  • Title

    Charge collection from ion tracks in simple EPI diodes

  • Author

    Edmonds, Larry D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    44
  • Issue
    3
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    1448
  • Lastpage
    1463
  • Abstract
    Charge collection from ion tracks in epi diodes is investigated. As previously noted by others, the collected charge can exceed the charge liberated in the epi layer. Fundamental concepts are discussed and illustrated by computer simulation results. It is found that the n +-p-p+ diode displays a funneling regime and a diffusion regime (as previously noted by others), but the p+-n-n+ diode does not display separate regimes. Simple quantitative models are provided which agree fairly well with computer simulation results. Experimental data were compared to one of the models, and good agreement was found
  • Keywords
    carrier lifetime; carrier mobility; impurity scattering; ion beam effects; semiconductor device models; semiconductor diodes; Si; charge collection; computer simulation; diffusion regime; epi diodes; funneling regime; ion tracks; n+-p-p+ diode; p+-n-n+ diode; quantitative models; single event effects; Carbon capture and storage; Charge carrier processes; Computer displays; Computer simulation; Diodes; Doping; Propulsion; Scattering; Semiconductor process modeling; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.589631
  • Filename
    589631