DocumentCode :
1248382
Title :
Charge collection from ion tracks in simple EPI diodes
Author :
Edmonds, Larry D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
44
Issue :
3
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
1448
Lastpage :
1463
Abstract :
Charge collection from ion tracks in epi diodes is investigated. As previously noted by others, the collected charge can exceed the charge liberated in the epi layer. Fundamental concepts are discussed and illustrated by computer simulation results. It is found that the n +-p-p+ diode displays a funneling regime and a diffusion regime (as previously noted by others), but the p+-n-n+ diode does not display separate regimes. Simple quantitative models are provided which agree fairly well with computer simulation results. Experimental data were compared to one of the models, and good agreement was found
Keywords :
carrier lifetime; carrier mobility; impurity scattering; ion beam effects; semiconductor device models; semiconductor diodes; Si; charge collection; computer simulation; diffusion regime; epi diodes; funneling regime; ion tracks; n+-p-p+ diode; p+-n-n+ diode; quantitative models; single event effects; Carbon capture and storage; Charge carrier processes; Computer displays; Computer simulation; Diodes; Doping; Propulsion; Scattering; Semiconductor process modeling; Space technology;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.589631
Filename :
589631
Link To Document :
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