DocumentCode
1248382
Title
Charge collection from ion tracks in simple EPI diodes
Author
Edmonds, Larry D.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
44
Issue
3
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
1448
Lastpage
1463
Abstract
Charge collection from ion tracks in epi diodes is investigated. As previously noted by others, the collected charge can exceed the charge liberated in the epi layer. Fundamental concepts are discussed and illustrated by computer simulation results. It is found that the n +-p-p+ diode displays a funneling regime and a diffusion regime (as previously noted by others), but the p+-n-n+ diode does not display separate regimes. Simple quantitative models are provided which agree fairly well with computer simulation results. Experimental data were compared to one of the models, and good agreement was found
Keywords
carrier lifetime; carrier mobility; impurity scattering; ion beam effects; semiconductor device models; semiconductor diodes; Si; charge collection; computer simulation; diffusion regime; epi diodes; funneling regime; ion tracks; n+-p-p+ diode; p+-n-n+ diode; quantitative models; single event effects; Carbon capture and storage; Charge carrier processes; Computer displays; Computer simulation; Diodes; Doping; Propulsion; Scattering; Semiconductor process modeling; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.589631
Filename
589631
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