• DocumentCode
    1248414
  • Title

    Double Mesa Sidewall Silicon Carbide Avalanche Photodiode

  • Author

    Liu, Han-Din ; Zheng, Xiaoguang ; Zhou, Qiugui ; Bai, Xiaogang ; Mcintosh, Dion C. ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    45
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1524
  • Lastpage
    1528
  • Abstract
    We report a double mesa 4H-SiC avalanche photodiode (APD) that suppresses premature edge break-down. The motivation for the double mesa structure is to eliminate the optically dead region that extends radially up to 30 mum beyond the active region of conventional beveled mesa SiC APDs, which can significantly restrict the fill-factor of arrays.
  • Keywords
    avalanche photodiodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; SiC; active region; avalanche photodiode; double mesa sidewall silicon carbide APD; fill factor; optically dead region; premature edge breakdown; Aluminum gallium nitride; Avalanche photodiodes; Biomedical optical imaging; Dark current; Detectors; Electric breakdown; Optical arrays; Optical sensors; Photodetectors; Silicon carbide; Avalanche photodiodes; photodetector; silicon carbide; ultraviolet detector;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2022046
  • Filename
    5308688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1248414