A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

Author

Kim, Binn ; Choi, Seung Chan ; Lee, Soo-Yeon ; Kuk, Seung-Hee ; Jang, Yong Ho ; Kim, Chang-Dong ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea

Volume

32

Issue

8

fYear

2011

Firstpage

1092

Lastpage

1094

Abstract

We proposed and fabricated a new depletion-mode amorphous indium-gallium-zinc-oxide thin-film-transistor (a-IGZO TFT) shift register. Although only one low-voltage-level power signal (VGL) rather than widely used two ones was employed, the depletion-mode a-IGZO TFTs in the proposed shift register were turned off completely due to a series-connected two-transistor structure. The proposed shift register exhibited successfully a high-voltage output pulse. The power consumption of the shift register with ten stages is 1.67 mW at the high-voltage-level power signal of 20 V, the VGL of -5 V, and the clock frequency of 13.9 kHz.

Keywords

clocks; gallium compounds; indium compounds; low-power electronics; power consumption; shift registers; thin film transistors; zinc compounds; InGaZnO; a-IGZO TFT shift register; amorphous indium-gallium-zinc-oxide thin-film-transistor; clock frequency; depletion-mode TFT shift register; frequency 13.9 kHz; low-voltage-level power signal; power 1.67 mW; power consumption; series-connected two-transistor structure; voltage 20 V; Clocks; Logic gates; Power demand; Shift registers; Simulation; Thin film transistors; Amorphous indium–gallium–zinc-oxide thin-film transistor (a-IGZO TFT); depletion-mode; low-voltage-level power signal (VGL); shift register;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2157989

Filename

5898387