DocumentCode :
1248843
Title :
GaN/InGaN Heterojunction Bipolar Transistors With 
Author :
Shen, Shyh-Chiang ; Dupuis, Russell D. ; Lee, Yi-Che ; Kim, Hee-Jin ; Zhang, Yun ; Lochner, Zachary ; Yoder, P.Douglas ; Ryou, Jae-Hyun
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
32
Issue :
8
fYear :
2011
Firstpage :
1065
Lastpage :
1067
Abstract :
We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density (JC) >; 16 kA/cm2 and the current gain (β) >; 24 grown on a sapphire substrate. The cutoff frequency (fT) of greater than 5 GHz and the maximum oscillation frequency (fmax) of 1.3 GHz are also measured for a GaN/InGaN heterojunction bipolar transistor at JC = 4.7 kA/cm2.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; wide band gap semiconductors; Al2O3; GaN-InGaN; collector current density; frequency 1.3 GHz; n-p-n double-heterojunction bipolar transistors; sapphire substrate; Aluminum gallium nitride; Double heterojunction bipolar transistors; Gallium nitride; Radio frequency; Substrates; Temperature measurement; GaN; heterojunction bipolar transistors (HBTs); radio frequency (RF);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2156378
Filename :
5898388
Link To Document :
