DocumentCode :
1248853
Title :
Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial 
Author :
Luo, Jun ; Gao, Xindong ; Qiu, Zhi-Jun ; Lu, Jun ; Wu, Dongping ; Zhao, Chao ; Li, Junfeng ; Chen, Dapeng ; Hultman, Lars ; Zhang, Shi-Li
Author_Institution :
Inst. of Micro Electron., Chinese Acad. of Sci., Beijing, China
Volume :
32
Issue :
8
fYear :
2011
Firstpage :
1029
Lastpage :
1031
Abstract :
The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi2-y film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi2-y formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800°C allow the epitaxial NiSi2-y film to take full advantage of the DS process. For drive-in annealing below 750°C , the effective SBH is altered to ~ 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi2-y film.
Keywords :
Schottky diodes; annealing; epitaxial layers; nickel compounds; segregation; thermal stability; DS process; NiSi2-y; SBH; Schottky barrier height; Schottky diodes; Si; dopant implantation; dopant segregation process; drive-in annealing; electron volt energy 0.9 eV to 1 eV; heat treatment; lattice restoration; morphological stability; thermal stability; ultrathin epitaxial film; Annealing; Epitaxial growth; Schottky barriers; Schottky diodes; Silicides; Silicon; Thermal stability; $hbox{NiSi}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2157301
Filename :
5898390
Link To Document :
