Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial $\\hbox {NiSi}_{2 - y}$

Author

Luo, Jun ; Gao, Xindong ; Qiu, Zhi-Jun ; Lu, Jun ; Wu, Dongping ; Zhao, Chao ; Li, Junfeng ; Chen, Dapeng ; Hultman, Lars ; Zhang, Shi-Li

Author_Institution

Inst. of Micro Electron., Chinese Acad. of Sci., Beijing, China

Volume

32

Issue

8

fYear

2011

Firstpage

1029

Lastpage

1031

Abstract

The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi_2-y film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi_2-y formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800°C allow the epitaxial NiSi_2-y film to take full advantage of the DS process. For drive-in annealing below 750°C , the effective SBH is altered to ~ 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi_2-y film.

Keywords

Schottky diodes; annealing; epitaxial layers; nickel compounds; segregation; thermal stability; DS process; NiSi_2-y; SBH; Schottky barrier height; Schottky diodes; Si; dopant implantation; dopant segregation process; drive-in annealing; electron volt energy 0.9 eV to 1 eV; heat treatment; lattice restoration; morphological stability; thermal stability; ultrathin epitaxial film; Annealing; Epitaxial growth; Schottky barriers; Schottky diodes; Silicides; Silicon; Thermal stability; $hbox{NiSi}_{2}$; Dopant segregation (DS); Schottky barrier height (SBH); epitaxy; morphological stability; ultrathin;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2157301

Filename

5898390