DocumentCode :
1248864
Title :
Geometrical Analysis of Solar Cells With Partial Rear Contacts
Author :
Cuevas, Andres
Author_Institution :
Australian Nat. Univ., Canberra, ACT, Australia
Volume :
2
Issue :
4
fYear :
2012
Firstpage :
485
Lastpage :
493
Abstract :
The analysis of solar cells where the posterior metal contact is formed only on part of the rear surface, which is mostly covered by a nonconductive, passivating layer, is both important and complex. A possible approach, based on a geometrical representation of the device structure, is examined here. As minority carriers flow toward the localized rear contact, they crowd inside a diminishing cross-sectional area, resulting in a high current density. The latter demands a strong gradient in their concentration, which leads to an increase of the open-circuit voltage Voc. Similarly, the crowding of majority carriers requires a strong gradient of the electrostatic potential, which leads to an increased series resistance Rs. These effects of carrier crowding are described here with simple mathematical expressions that permit an approximate evaluation of Voc and Rs for partial rear contact solar cells.
Keywords :
geometry; metals; solar cells; carrier crowding; device structure; electrostatic potential; geometrical representation; localized rear contact; mathematical expression; nonconductive layer; open-circuit voltage; partial rear contact; passivating layer; posterior metal contact; series resistance; solar cell; Charge carrier density; Contacts; Electric potential; Modeling; Photovoltaic cells; Surface resistance; Modeling; partial rear contact solar cells;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2204958
Filename :
6246670
Link To Document :
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