Title :
Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT
Author :
Bauer, Friedhelm ; Nistor, Iulian ; Mihaila, Andrei ; Antoniou, Marina ; Udrea, Florin
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Zürich, Switzerland
Abstract :
In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dEoff/dVce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time.
Keywords :
MOSFET; insulated gate bipolar transistors; losses; Eoff-versus-Vce tradeoff curve; ON-state loss; SJ MOSFET; bipolar device behavior; drift layer depletion; p-pillar hole current action; power-handling capability; superjunction IGBT; superjunction MOSFET; transconductance current gain impact; transition region; turnoff loss; ultrafast IGBT; unipolar device behavior; unusual inverse slope; vertical superjunction insulated-gate bipolar transistor; Current density; Doping; Insulated gate bipolar transistors; Junctions; Power MOSFET; Transconductance; Bipolar-to-unipolar transition; superjunction MOSFET (SJ MOSFET); superjunction insulated-gate bipolar transistor (SJ IGBT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2203092
