DocumentCode :
1248886
Title :
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors
Author :
Esseni, David ; Driussi, Francesco
Author_Institution :
Dipt. di Ing. Elettr., Gestionale, e Meccanica, Univ. of Udine, Udine, Italy
Volume :
58
Issue :
8
fYear :
2011
Firstpage :
2415
Lastpage :
2422
Abstract :
This paper presents a quantitative analysis of the errors produced by the Matthiessen rule in the extraction of the inversion-layer mobility in metal-oxide-semiconductor transistors. We show that the Matthiessen rule results in large inaccuracies in the mobility extraction, and most of all, it can lead to wrong trends, namely, to an incorrect dependence of the mobility on the temperature or the strain level. Consequently, when the Matthiessen rule is used to infer a given mobility component from the experiments, the inaccuracy of the extraction procedure can yield apparent discrepancies between experiments and simulations. Our results demonstrate that the mobility components extracted from the measurements by using the Matthiessen rule should not be regarded as experimental data because the extraction procedure relies on assumptions that are not fulfilled in most practical cases.
Keywords :
MOSFET; carrier mobility; electrical conductivity; error analysis; inversion layers; Matthiessen rule; advanced MOS transistor; inversion-layer mobility extraction; metal oxide semiconductor transistor; quantitative error analysis; Data mining; Data models; Doping; MOSFETs; Scattering; Semiconductor process modeling; Strain; Coulomb-limited mobility; Matthiessen´s rule; mobility characterization; mobility simulation; strain;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2151863
Filename :
5898397
Link To Document :
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