Title :
A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS
Author :
Liu, Jenny Yi-Chun ; Gu, Qun Jane ; Tang, Adrian ; Wang, Ning-Yi ; Chang, Mau-Chung Frank
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
fDate :
7/1/2011 12:00:00 AM
Abstract :
A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm2. It achieves a minimal Psat-P1dB separation of 0.6 dB by extending the P1dB by 8.5 dB. To our best knowledge, this is the smallest Psat-P1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.
Keywords :
CMOS analogue integrated circuits; compensation; differential amplifiers; feedback; millimetre wave devices; power amplifiers; CMOS; adaptive feedback bias scheme; amplitude compensation; differential amplifier; frequency 60 GHz; integrated three stage power amplifier; linear operating region; on chip phase compensation; output phase variation; size 65 nm; tunable output profile power amplifier; CMOS integrated circuits; Capacitance; Circuit faults; Gain; Logic gates; Power generation; System-on-a-chip; CMOS; millimeter wave; power amplifier (PA); transformers;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2152386