DocumentCode :
1249077
Title :
A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS
Author :
Liu, Jenny Yi-Chun ; Gu, Qun Jane ; Tang, Adrian ; Wang, Ning-Yi ; Chang, Mau-Chung Frank
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Volume :
21
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
377
Lastpage :
379
Abstract :
A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm2. It achieves a minimal Psat-P1dB separation of 0.6 dB by extending the P1dB by 8.5 dB. To our best knowledge, this is the smallest Psat-P1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.
Keywords :
CMOS analogue integrated circuits; compensation; differential amplifiers; feedback; millimetre wave devices; power amplifiers; CMOS; adaptive feedback bias scheme; amplitude compensation; differential amplifier; frequency 60 GHz; integrated three stage power amplifier; linear operating region; on chip phase compensation; output phase variation; size 65 nm; tunable output profile power amplifier; CMOS integrated circuits; Capacitance; Circuit faults; Gain; Logic gates; Power generation; System-on-a-chip; CMOS; millimeter wave; power amplifier (PA); transformers;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2152386
Filename :
5898436
Link To Document :
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