• DocumentCode
    1249475
  • Title

    Dynamic life-estimation of CMOS ICs in real operating environment: precise electrical method and MLE

  • Author

    Son, Kyung-Im ; Soma, Mani

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    46
  • Issue
    1
  • fYear
    1997
  • fDate
    3/1/1997 12:00:00 AM
  • Firstpage
    31
  • Lastpage
    37
  • Abstract
    The functionality of an IC in field use can be maintained by replacing an IC shortly before its anticipated failure. An accurate estimation of circuit lifetime is important in selecting a replacement time to: (1) avoid unanticipated circuit failure by replacing them as early as possible; and (2) use the IC fully by replacing them as late as possible. Since the problem is different from lifetime estimation with accelerated test results, this approach continually measures circuit performance and then analyzes the measurements statistically. The whole estimation process is covered from selection of circuit parameters for performance measurement to development of an aging model for the statistical analysis. The circuit-delay change due to hot-carrier effects is selected to quantify the performance degradation; an aging model, founded on the hot-carrier induced failure mechanism, is developed. Maximum likelihood estimation (MLE) is used for the statistical characteristics of future aging, where the severity of the operating environment is assumed to be a stationary random process. The MLE are used to choose an efficient time for IC replacement. The practical use of the suggested method in IC maintenance is demonstrated with statistically simulated data
  • Keywords
    CMOS integrated circuits; ageing; hot carriers; integrated circuit reliability; maintenance engineering; maximum likelihood estimation; CMOS IC; IC functionality; IC maintenance; aging model; circuit lifetime estimation; circuit maintenance; circuit parameters; circuit performance measurement; circuit-delay change; dynamic life-estimation; electrical method; failure mechanism; hot-carrier effects; hot-carrier induced failure mechanism; maximum likelihood estimation; optimal IC replacement; performance degradation; performance measurement; random operating environment; real operating environment; reliability analysis; statistical analysis; Aging; Circuit optimization; Circuit testing; Hot carrier effects; Life estimation; Life testing; Lifetime estimation; Maximum likelihood estimation; Measurement; Performance analysis;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/24.589923
  • Filename
    589923