Title :
Super low-noise HEMTs with a T-shaped WSix gate
Author :
Hanyu, I. ; Asai, Satoshi ; Nunokawa, M. ; Joshin, Kazukiyo ; Hirachi, Yasutake ; Ohmura, S. ; Aoki, Yuya
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
10/13/1988 12:00:00 AM
Abstract :
A T-shaped quarter-micron gate structure composed of WSix /Ti/Pt/Au has been developed for low-noise AlGaAs/GaAs HEMTs. The gate resistance Rg was reduced to 0.3 Ω for devices with 200 μm-wide gates despite using WSix, and the source resistance Rs reached 0.28 Ω mm by minimising the source-gate distance using a self-alignment technique. This HEMT exhibited the lowest reported noise figure of 0.54 dB with an associated gain of 12.1 dB at 12 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.54 dB; 12 GHz; 12.1 dB; AlGaAs-GaAs; HEMTs; WSix-Ti-Pt-Au; gain; gate resistance; noise figure; quarter-micron gate structure; self-alignment technique; source resistance; source-gate distance;
Journal_Title :
Electronics Letters
