Title :
High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs
Author :
Deguchi, Tadayoshi ; Kikuchi, Toshikatsu ; Arai, Manabu ; Yamasaki, Kimiyoshi ; Egawa, Takashi
Author_Institution :
Technol. Dev. Headquarters, New Japan Radio Co., Ltd., Fujimino, Japan
Abstract :
An excellent on/off current ratio of 1010 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I-V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of 10-11 A/mm.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; HEMT; I-V characteristics; InGaN-AlGaN-GaN; dry etching technique; gate electrode; high on-off current ratio; high-electron-mobility transistor; low leakage current; low-damage p-cap layer; Aluminum gallium nitride; Etching; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasmas; AlGaN/GaN high-electron-mobility transistor (HEMT); gate leakage current; on/off current ratio; p-InGaN;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2204854
