Title :
30 Gbit/s 1:4 demultiplexer IC using AlGaAs/GaAs HBTs
Author :
Runge, K. ; Pierson, R.L. ; Zampardi, P.J. ; Yu, Jinpeng ; Wang, K.C.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA
fDate :
4/24/1997 12:00:00 AM
Abstract :
An experimental high speed 1:4 demultiplexer integrated circuit featuring output bit alignment, reduced gate count, and a novel circuit architecture is presented. The experimental circuit features an inherently fast two-stage configuration, with operation at up to 30 Gbit/s demonstrated in an advanced AlGaAs/GaAs heterojunction bipolar technology. The system clock frequency is half the bit rate with only one additional self-generated internal clock necessary
Keywords :
III-V semiconductors; aluminium compounds; bipolar digital integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; time division multiplexing; 30 Gbit/s; AlGaAs-GaAs; HBT; circuit architecture; demultiplexer IC; heterojunction bipolar technology; high speed integrated circuit; output bit alignment; self-generated internal clock; system clock frequency; two-stage configuration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970496
