Title :
Potential and modelling of 1 μm 1 GHz SOI CMOS OTAs
Author :
Eggermont, J.P. ; Flandre, Denis ; Raskin, J.P. ; Colinge, J.P.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain
fDate :
4/24/1997 12:00:00 AM
Abstract :
High-frequency device models, design guidelines and frequency limitations are presented, as well as layout and technology improvements to boost the transconductance at high frequency and to reduce the substrate capacitances. Implementations of one-stage and folded-cascode op-amps have been realised to validate the design method
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit layout; integrated circuit modelling; linear network synthesis; operational amplifiers; silicon-on-insulator; wideband amplifiers; 1 GHz; 1 micron; SOI CMOS OTA; Si; design guidelines; design method; folded-cascode op-amps; frequency limitations; high-frequency device models; one-stage op-amps; substrate capacitances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970517
