Title :
Stable operation of InGaAs/InGaP/AlGaAs (λ=1020 nm) laser diodes
Author :
Erbert, G. ; Beister, G. ; Bugge, F. ; Maege, J. ; Ressel, P. ; Sebastian, J. ; Vogel, K. ; Wenzel, H. ; Weyers, M.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochfrequenztechnik, Berlin, Germany
fDate :
4/24/1997 12:00:00 AM
Abstract :
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of such laser diodes was tested at 40°C and 100 mW emission power over 1000 h, showing degradation rates of between 1.3×10-5/h and 3.6×10-5/h without any visible facet damage
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser frequency stability; ridge waveguides; semiconductor device reliability; semiconductor lasers; 100 mW; 1000 h; 1020 nm; 40 degC; InGaAs-InGaP-AlGaAs; degradation rates; emission power; facet damage; facet degradation; laser diodes; lattice matching; long-term behaviour; ridge waveguide; semiconductor device reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970502
