• DocumentCode
    1250055
  • Title

    Direct extraction of base-collector model parameters for AlGaAs/GaAs HBT equivalent circuit

  • Author

    Lee, Seonghearn

  • Author_Institution
    Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
  • Volume
    33
  • Issue
    9
  • fYear
    1997
  • fDate
    4/24/1997 12:00:00 AM
  • Firstpage
    815
  • Lastpage
    817
  • Abstract
    A new and direct extraction technique based on analytical equations of Z-parameters is used to determine all parameters in the base contact impedance and distributed base model of the AlGaAs/GaAs HBT, without numerical optimisation processing. This technique yields good agreement between HBT equivalent circuit and measured S-parameters, verifying the accuracy of the extraction
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; AlGaAs/GaAs HBT; S-parameters; Z-parameters; base contact impedance; base-collector model; direct extraction; distributed base model; equivalent circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970539
  • Filename
    590271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1250055