• DocumentCode
    1250060
  • Title

    High-performance X-band MMIC LNAs using dry recessed PHEMTs

  • Author

    Kwon, Youngwoo ; Sovero, E.A. ; Deakin, D.S. ; Higgins, J.A.

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ.
  • Volume
    33
  • Issue
    9
  • fYear
    1997
  • fDate
    4/24/1997 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    818
  • Abstract
    The authors report compact and low-DC-power LNAs using dry recessed PHEMTs. Dry recess and optimum circuit design were used to reduce the chip size and DC power consumption while improving uniformity and yield. Two-stage PHEMT LNAs showed a noise figure of 1.45 dB at 10 GHz with a 22 dB gain. The active chip size was 0.9 mm2 and DC power consumption was 75 mW
  • Keywords
    HEMT integrated circuits; MMIC amplifiers; field effect MMIC; 1.45 dB; 10 GHz; 22 dB; 75 mW; DC power consumption; X-band MMIC LNA; active chip size; dry recessed PHEMT; gain; low-power two-stage amplifier; noise figure; optimum circuit design; uniformity; yield;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970544
  • Filename
    590272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1250060