DocumentCode
1250063
Title
Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
Author
Sung, B. ; Chui, H.C. ; Fejer, M.M. ; Harris, J.S.
Author_Institution
Solid State Lab., Stanford Univ., CA
Volume
33
Issue
9
fYear
1997
fDate
4/24/1997 12:00:00 AM
Firstpage
818
Lastpage
820
Abstract
The authors report intersubband transitions shorter than 2 μm in square and coupled InGaAs/AlAs quantum wells (QWs) grown on GaAs substrates. The linearly graded buffer technique is used to facilitate the growth of quantum wells with indium contents of 50 and 60%. E12 of 720 meV (1.72 μm) is achieved in six mono-layer (ML) wide In0.6Ga0.4As/AlAs QWs. Asymmetrically coupled In 0.5Ga0.5As/AlAs QWs exhibit intersubband transition as high as 780 meV (1.59 μm) for the 1-4 transition
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; semiconductor quantum wells; 1.59 to 1.72 micron; GaAs; GaAs substrate; InGaAs-AlAs; InGaAs/AlAs quantum well; asymmetrically coupled QW; growth; indium content; linearly graded buffer; near-infrared wavelength intersubband transition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970514
Filename
590273
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