Title :
Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
Author :
Sung, B. ; Chui, H.C. ; Fejer, M.M. ; Harris, J.S.
Author_Institution :
Solid State Lab., Stanford Univ., CA
fDate :
4/24/1997 12:00:00 AM
Abstract :
The authors report intersubband transitions shorter than 2 μm in square and coupled InGaAs/AlAs quantum wells (QWs) grown on GaAs substrates. The linearly graded buffer technique is used to facilitate the growth of quantum wells with indium contents of 50 and 60%. E12 of 720 meV (1.72 μm) is achieved in six mono-layer (ML) wide In0.6Ga0.4As/AlAs QWs. Asymmetrically coupled In 0.5Ga0.5As/AlAs QWs exhibit intersubband transition as high as 780 meV (1.59 μm) for the 1-4 transition
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; semiconductor quantum wells; 1.59 to 1.72 micron; GaAs; GaAs substrate; InGaAs-AlAs; InGaAs/AlAs quantum well; asymmetrically coupled QW; growth; indium content; linearly graded buffer; near-infrared wavelength intersubband transition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970514
