Title :
Noise modelling of dual-gate MESFET
Author :
Markovic, Vera ; Milovanovic, Bratislav ; Males-Ilic, Natasa
Author_Institution :
Fac. of Electron. Eng., Nis Univ.
fDate :
4/24/1997 12:00:00 AM
Abstract :
A dual-gate MESFET noise model, based on two cascaded single-gate MESFET intrinsic equivalent circuits, is proposed. Four assigned equivalent temperatures are extracted together with the other model elements. A CAD oriented procedure is developed for the determination of dual-gate MESFET noise parameters over a wide frequency range
Keywords :
Schottky gate field effect transistors; equivalent circuits; semiconductor device models; semiconductor device noise; CAD; cascaded single-gate MESFET intrinsic equivalent circuits; dual-gate MESFET; equivalent temperature; noise model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970537
