DocumentCode :
1250066
Title :
Noise modelling of dual-gate MESFET
Author :
Markovic, Vera ; Milovanovic, Bratislav ; Males-Ilic, Natasa
Author_Institution :
Fac. of Electron. Eng., Nis Univ.
Volume :
33
Issue :
9
fYear :
1997
fDate :
4/24/1997 12:00:00 AM
Firstpage :
820
Lastpage :
821
Abstract :
A dual-gate MESFET noise model, based on two cascaded single-gate MESFET intrinsic equivalent circuits, is proposed. Four assigned equivalent temperatures are extracted together with the other model elements. A CAD oriented procedure is developed for the determination of dual-gate MESFET noise parameters over a wide frequency range
Keywords :
Schottky gate field effect transistors; equivalent circuits; semiconductor device models; semiconductor device noise; CAD; cascaded single-gate MESFET intrinsic equivalent circuits; dual-gate MESFET; equivalent temperature; noise model;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970537
Filename :
590275
Link To Document :
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