Title :
Nearly perfect output power saturation of the semiconductor Raman laser
Author :
Suto, K. ; Kimura, T. ; Nishizawa, J.
Author_Institution :
Semicond. Res. Inst., Sendai, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
Low-threshold semiconductor Raman lasers with a tapered waveguide structure with GaP core and AlxGa1-xP cladding layers have been operated in a quasi CW operation condition. It has been found that the first Stokes light output power nearly perfectly saturates when the pump power is increased, and this has been attributed to lasing of the second Stokes light. This effect will be useful for realising a low-noise light wave source
Keywords :
III-V semiconductors; Raman lasers; gallium compounds; laser noise; optical pumping; optical saturation; semiconductor device noise; semiconductor lasers; waveguide lasers; AlxGa1-xP cladding layers; AlGaP; GaP; GaP core; first Stokes light output power; low-noise light wave source; low-threshold semiconductor Raman lasers; nearly perfect output power saturation; pump power; quasi CW operation condition; second Stokes light; semiconductor Raman laser; tapered waveguide structure;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19970755
