DocumentCode
1250098
Title
Nearly perfect output power saturation of the semiconductor Raman laser
Author
Suto, K. ; Kimura, T. ; Nishizawa, J.
Author_Institution
Semicond. Res. Inst., Sendai, Japan
Volume
144
Issue
2
fYear
1997
fDate
4/1/1997 12:00:00 AM
Firstpage
87
Lastpage
90
Abstract
Low-threshold semiconductor Raman lasers with a tapered waveguide structure with GaP core and AlxGa1-xP cladding layers have been operated in a quasi CW operation condition. It has been found that the first Stokes light output power nearly perfectly saturates when the pump power is increased, and this has been attributed to lasing of the second Stokes light. This effect will be useful for realising a low-noise light wave source
Keywords
III-V semiconductors; Raman lasers; gallium compounds; laser noise; optical pumping; optical saturation; semiconductor device noise; semiconductor lasers; waveguide lasers; AlxGa1-xP cladding layers; AlGaP; GaP; GaP core; first Stokes light output power; low-noise light wave source; low-threshold semiconductor Raman lasers; nearly perfect output power saturation; pump power; quasi CW operation condition; second Stokes light; semiconductor Raman laser; tapered waveguide structure;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19970755
Filename
590328
Link To Document