Title :
Characterization of probe contact noise for probes used in wafer-level testing
Author :
Yassine, A.M. ; Clien, T.M. ; Beitman, Bruce A.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
The characteristics of probe contact noise for tungsten probes used in wafer-level testing are presented. The effects of the biasing current and the probe contact resistance, R/sub c/, on the probe contact noise were investigated. This information is required for low-noise probe design as well as for reduction of the contact noise effects on sample noise measurements. The results show that the spectral density of the probe contact noise voltage has a 1/f frequency dependence and is proportional to V/sub c//sup 2/R/sub c//sup Gamma / where Gamma is a constant which has a value between -0.1 and 0.6 depending on the conditions of the contact interfaces.<>
Keywords :
electrical contacts; electron device noise; probes; random noise; tungsten; 1/f frequency dependence; W probes; biasing current; characterization; contact interfaces; contact noise effects; four point probes; low-noise probe design; probe contact noise; probe contact resistance; sample noise measurements; spectral density; wafer-level testing; Circuit noise; Contact resistance; Current measurement; Noise generators; Noise measurement; Noise reduction; Probes; Semiconductor device noise; System testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
