Characterization of probe contact noise for probes used in wafer-level testing

Author

Yassine, A.M. ; Clien, T.M. ; Beitman, Bruce A.

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

Volume

12

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

200

Lastpage

202

Abstract

The characteristics of probe contact noise for tungsten probes used in wafer-level testing are presented. The effects of the biasing current and the probe contact resistance, R/sub c/, on the probe contact noise were investigated. This information is required for low-noise probe design as well as for reduction of the contact noise effects on sample noise measurements. The results show that the spectral density of the probe contact noise voltage has a 1/f frequency dependence and is proportional to V/sub c//sup 2/R/sub c//sup Gamma / where Gamma is a constant which has a value between -0.1 and 0.6 depending on the conditions of the contact interfaces.<>

Keywords

electrical contacts; electron device noise; probes; random noise; tungsten; 1/f frequency dependence; W probes; biasing current; characterization; contact interfaces; contact noise effects; four point probes; low-noise probe design; probe contact noise; probe contact resistance; sample noise measurements; spectral density; wafer-level testing; Circuit noise; Contact resistance; Current measurement; Noise generators; Noise measurement; Noise reduction; Probes; Semiconductor device noise; System testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.79555

Filename

79555