Title :
High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration
Author :
Harrang, J.P. ; Daniels, Robert R. ; Fuji, H.S. ; Griem, H.T. ; Ray, Sankar
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
The authors report the successful demonstration of a 1.0- mu m gate InAlAs/InGaAs heterojunction FET (HFET) on top of thick InGaAs layers using lattice-matched molecular beam epitaxy (MBE). This scheme is compatible with metal-semiconductor-metal (MSM) photodetector fabrication. The authors measured the performance of InAlAs/InGaAs HFETs from 0 to 40 GHz. Device performance is characterized by peak extrinsic transconductances of 390 mS/mm and as-measured cutoff frequencies up to 30 GHz for a nominal 1.0- mu m-gate-length HFET. HFET device measurements are compared for samples growth with and without the thick underlying InGaAs optical-detector absorbing layer.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; semiconductor growth; 0 to 40 GHz; 1 micron; HFET; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; OEIC; cutoff frequencies; heteroepitaxy; heterojunction FET; lattice matched MBE; optical-detector integration; semiconductors; transconductances; Cutoff frequency; FETs; Fabrication; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Photodetectors;
Journal_Title :
Electron Device Letters, IEEE
