Novel InAs/(Al,Ga)Sb FET with direct gate-to-channel contact

Author

Frank, David J. ; La Tulipe, D.C., Jr. ; Munekata, H.

Author_Institution

IBM Thomas J Watson Res. Center, Yorktown Heights, NY, USA

Volume

12

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

210

Lastpage

212

Abstract

A new type of FET has been fabricated in which the gate is in direct contact with the channel. There is no intervening charge separating layer. Instead, the separation of gate and channel carriers is achieved by using the staggered band alignment of InAs/(Al,Ga)Sb such that a p/sup +/ (Al,Ga)Sb gate layer is placed in direct contact with the n-type InAs channel. At 77 K the measured devices show both current gain and voltage gain, and a maximum transconductance of 500 mS/mm has been observed.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; indium compounds; semiconductor junctions; semiconductor technology; 77 K; FET; InAs channel; InAs-Al/sub x/Ga/sub 1-x/Sb; ZFET; current gain; direct gate-to-channel contact; semiconductors; staggered band alignment; transconductance; voltage gain; zero dielectric thickness; Charge carrier processes; Current measurement; Dielectric devices; Dielectric measurements; Dielectrics and electrical insulation; Electrons; FETs; Gain measurement; Photonic band gap; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.79558

Filename

79558