Title :
Novel InAs/(Al,Ga)Sb FET with direct gate-to-channel contact
Author :
Frank, David J. ; La Tulipe, D.C., Jr. ; Munekata, H.
Author_Institution :
IBM Thomas J Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
A new type of FET has been fabricated in which the gate is in direct contact with the channel. There is no intervening charge separating layer. Instead, the separation of gate and channel carriers is achieved by using the staggered band alignment of InAs/(Al,Ga)Sb such that a p/sup +/ (Al,Ga)Sb gate layer is placed in direct contact with the n-type InAs channel. At 77 K the measured devices show both current gain and voltage gain, and a maximum transconductance of 500 mS/mm has been observed.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; indium compounds; semiconductor junctions; semiconductor technology; 77 K; FET; InAs channel; InAs-Al/sub x/Ga/sub 1-x/Sb; ZFET; current gain; direct gate-to-channel contact; semiconductors; staggered band alignment; transconductance; voltage gain; zero dielectric thickness; Charge carrier processes; Current measurement; Dielectric devices; Dielectric measurements; Dielectrics and electrical insulation; Electrons; FETs; Gain measurement; Photonic band gap; Voltage;
Journal_Title :
Electron Device Letters, IEEE
