• DocumentCode
    1250395
  • Title

    65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors

  • Author

    Deza, J. ; Ouslimani, A. ; Konczykowska, Agnieszka ; Kasbari, A. ; Godin, J. ; Pailler, G.

  • Author_Institution
    Alcatel-Lucent Bell Labs., Marcoussis, France
  • Volume
    48
  • Issue
    15
  • fYear
    2012
  • Firstpage
    908
  • Lastpage
    910
  • Abstract
    Performances of two switched emitter follower structures for large bandwidth applications have been optimised, compared, implemented and measured. These circuits have been fabricated with a 320 GHz-FT InP double heterojunction bipolar transistor process. Measurements in track mode show a small-signal bandwidth over 65 GHz for one structure and over 50 GHz for the other. Track mode SFDR measured for 500 mVPP up to 15 GHz signal input is greater than 45 dBc.
  • Keywords
    III-V semiconductors; amplifiers; heterojunction bipolar transistors; indium compounds; measurement systems; millimetre wave transistors; InP; circuit fabrication; double heterojunction bipolar transistor process; frequency 320 GHz; frequency 65 GHz; large bandwidth applications; signal input; small-signal-bandwidth switched emitter follower; track mode SFDR; track mode measurements; voltage 500 mV;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.1770
  • Filename
    6248329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1250395