Title :
60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET´s
Author :
Lau, C.L. ; Feng, Milton ; Schellenberg, James ; Brusen, P. ; Lepkowski, Thomas ; Hwang, T. ; Ito, C.
Author_Institution :
Ford Microelectron. Inc., Colorado Spring, CO, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
The authors report the 60-GHz noise performance of low-noise ion-implanted In/sub x/Ga/sub 1-x/As MESFETs with 0.25 mu m T-shaped gates and amplifiers using these devices. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-state amplifier using these ion-implanted In/sub x/Ga/sub 1-x/As MESFETs achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% I/sub dss/, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFETs.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; indium compounds; ion implantation; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 0.25 micron; 10.1 to 11.5 dB; 2.8 dB; 4.6 dB; 5.6 dB; 60 GHz; EHF; In/sub x/Ga/sub 1-x/As; In/sub x/Ga/sub 1-x/As:Si; T-shaped gates; amplifiers; device noise figure; gain; low noise MESFETs; noise performance; semiconductors; Cutoff frequency; Fixtures; Gain; Gallium arsenide; MESFETs; MOCVD; Noise figure; Optical amplifiers; Semiconductor device noise; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
