Title :
Explanation and model for the logarithmic time dependence of p-MOSFET degradation
Author :
Wang, Qin ; Brox, Martin ; Krautschneider, Wolfgang H. ; Weber, Werner
Author_Institution :
Siemens AG, Munich, Germany
fDate :
5/1/1991 12:00:00 AM
Abstract :
The degradation of p-MOS transistors is shown to proceed logarithmically in time. A simple, analytic degradation model is proposed that fully accounts for this observation. The logarithmic time dependence originates from the logarithmic growth of a region of filled traps from the drain junction towards the source. On this basis, a reliable lifetime extrapolation is performed.<>
Keywords :
electron traps; insulated gate field effect transistors; reliability; semiconductor device models; analytic degradation model; drain junction; lifetime extrapolation; logarithmic time dependence; model; p-MOSFET degradation; region of filled traps; submicron p-MOSFETs; Current density; Degradation; Electron traps; Filling; Heating; Hot carriers; Interface states; MOSFET circuits; Power generation; Stress;
Journal_Title :
Electron Device Letters, IEEE
