Title :
Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes
Author :
Rolland, P.A. ; Dalle, C. ; Friscourt, M.R.
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France
fDate :
5/1/1991 12:00:00 AM
Abstract :
A physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes is derived from a self-consistent numerical model. It is shown theoretically that there exists a uniformly avalanching p-i-n-like mode in high-current-density, pulsed silicon double-drift IMPATT diodes, as has been previously suggested. An optimum symmetrical flat doping-profile double-drift structure for 100-GHz operation is presented. It could deliver more than 40 W of available peak power with a 10% conversion efficiency accounting for circuit losses, at a safe junction temperature rise. The theoretical results allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle.<>
Keywords :
IMPATT diodes; elemental semiconductors; semiconductor device models; silicon; 10 percent; 40 to 50 W; 94 to 100 GHz; EHF; MM-wave diodes; Si; avalanching p-i-n-like mode; conversion efficiency; double-drift IMPATT diodes; flat doping-profile double-drift structure; high-current-density; high-power millimeter-wave pulsed IMPATT diodes; junction temperature rise; low duty cycle; mode of operation; numerical model; peak power; Current density; Equivalent circuits; Helium; Numerical models; P-i-n diodes; Power generation; Q factor; Radio frequency; Resonance; Semiconductor diodes;
Journal_Title :
Electron Device Letters, IEEE
