Title :
A spillover effect of avalanche-generated electrons in buried p-channel MOSFET´s
Author :
Odanaka, Shinji ; Hiroki, Akira
Author_Institution :
Matsushita Elect. Ind. Co. Ltd., Osaka, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
The authors describe a new mechanism for hot-electron resistance in buried p-channel MOSFETs, which is explained by the spillover of avalanche-generated electrons into the bulk. This effect was observed in a buried p-channel MOSFET formed in a retrograde n-well. It is shown that this effect reduces the hot-electron-induced device degradation even with the greater number of avalanche-generated electrons induced by high bulk doping.<>
Keywords :
insulated gate field effect transistors; reliability; semiconductor device models; buried p-channel MOSFETs; high bulk doping; hot-electron resistance; hot-electron-induced device degradation; retrograde n-well; spillover of avalanche-generated electrons; Degradation; Doping profiles; Electrons; FETs; Fabrication; Helium; MOSFET circuits; Stress; Substrates; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
