DocumentCode
1250860
Title
Large-volume thallium bromide detectors for gamma-ray spectroscopy
Author
Hitomi, K. ; Muroi, O. ; Matsumoto, M. ; Shoji, T. ; Hiratate, Y.
Author_Institution
Dept. of Electron., Tohoku Inst. of Technol., Sendai, Japan
Volume
48
Issue
6
fYear
2001
Firstpage
2313
Lastpage
2316
Abstract
Thallium bromide (TlBr) is a wide-bandgap compound semiconductor characterized with high photon stopping power. In this study, large-volume /spl gamma/-ray detectors (approximately 3.8 /spl times/ 3.8 /spl times/ 3.8 mm/sup 3/) have been fabricated from TlBr crystals grown by the horizontal travelling molten zone (TMZ) method using zone-purified material. In order to extract the energy information of the incident radiation from the thick detectors, the short charge-collection time technique has been applied to the detectors. By this technique, the induced charge on the electrode is measured for a period of time that is short compared to the carrier transit time in order to minimize the deviation of the measured induced charge. The large-volume TlBr detectors irradiated with /sup 22/Na and /sup 137/Cs /spl gamma/-ray sources at room temperature have exhibited energy resolutions of 18.7% and 17.4% (FWHM) for the 511- and 662-keV peaks, respectively. To our knowledge, this is the first time that full-energy peaks have been obtained from TlBr detectors several millimeters thick. The time stability of the detector operation is also studied.
Keywords
caesium; carrier mean free path; gamma-ray detection; gamma-ray spectroscopy; semiconductor counters; sodium; thallium compounds; wide band gap semiconductors; zone melting; /spl gamma/-ray sources; /sup 137/Cs; /sup 22/Na; 3.8 mm; 511 keV; 662 keV; TMZ; TlBr; carrier transit time; detector operation; energy information; energy resolutions; full-energy peaks; gamma-ray spectroscopy; high photon stopping power; horizontal travelling molten zone method; incident radiation; induced charge; large-volume thallium bromide detectors; short charge-collection time technique; time stability; wide-bandgap compound semiconductor; zone-purified material; Charge measurement; Crystalline materials; Current measurement; Gamma ray detection; Gamma ray detectors; Photonic crystals; Radiation detectors; Semiconductor materials; Spectroscopy; Time measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983258
Filename
983258
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