DocumentCode :
1250985
Title :
60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique
Author :
Muller, Mathias ; Rein, H.-M. ; Felder, A. ; Meister, T.F.
Author_Institution :
Ruhr-Univ., Bochum
Volume :
33
Issue :
8
fYear :
1997
fDate :
4/10/1997 12:00:00 AM
Firstpage :
679
Lastpage :
680
Abstract :
A 2:1 time-division multiplexer is presented which operates at up to 60 Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 0.5 V p-p (for 50Ω on-chip matching and 50Ω external load). The chips were fabricated using an advanced SiGe-bipolar technology (fT=68 GHz) and then mounted on a comparatively simple measuring socket
Keywords :
Ge-Si alloys; 60 Gbit/s; SiGe; SiGe-bipolar technology; integrated circuit; measuring socket; mounting; time-division multiplexer;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970442
Filename :
591003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1250985
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