DocumentCode
1251173
Title
Motional capacitance of layered piezoelectric thickness-mode resonators
Author
Schmid, Michael ; Benes, Ewald ; Burger, Wolfgang ; Kravchenko, Victor
Author_Institution
Inst. fuer Allgemeine Phys., Tech. Univ., Wien, Austria
Volume
38
Issue
3
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
199
Lastpage
206
Abstract
The Butterworth-Van Dyke equivalent circuit for description of the electrical behavior of piezoelectric bulk resonators is considered. The motional capacitance, C/sub 1/, in the circuit characterizes the strength of piezoelectric excitability of a vibration mode. For layered one-dimensional (1-D) structures this parameter can be calculated from the admittance given by the transfer matrix description of H. Nowotny and E. Benes (1987). Introducing the equivalent area of a vibration mode, the calculation is generalized for the three-dimensional (3-D) case of thickness-mode vibration amplitudes varying only slowly in the lateral directions. Detailed formulae are given for the case of singly rotated quartz crystals or ultrasonic transducers with additional layers on one or two sides. Good agreement of the calculated C/sub 1/ with experimental data is shown for mass-loaded planoconvex AT-cut quartz crystals.<>
Keywords
crystal resonators; equivalent circuits; piezoelectric transducers; quartz; ultrasonic transducers; AT-cut quartz; Butterworth-Van Dyke equivalent circuit; SiO/sub 2/; layered piezoelectric thickness-mode resonators; mass-loaded planoconvex; motional capacitance; piezoelectric bulk resonators; piezoelectric excitability; quartz crystals; thickness-mode vibration amplitudes; transfer matrix description; ultrasonic transducers; vibration mode; Admittance; Capacitance; Crystals; Electrodes; Equations; Equivalent circuits; Frequency; Levee; Piezoelectric materials; Resonance;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.79604
Filename
79604
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