Title :
GaAs FETs [microwave devices]
Author :
Nand, Nishant ; Gupta, Nikhil
Author_Institution :
Netaji Subhas Inst. of Technol., New Delhi, India
Abstract :
The field effect transistor (FET) at microwave frequencies using GaAs has been a cornerstone of research in solid state microwave devices for the past 30 years. It is an established item in the microwave systems of today in such applications as low noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. Indeed, many microwave systems would not be possible at their present day performance levels if it were not for the GaAs FET
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; semiconductor device models; FETs; GaAs; III V semiconductors; low noise amplifiers; microwave frequencies; mixers; multipliers; oscillators; power amplifiers; solid state microwave devices; switches; Availability; Doping; Electron mobility; Gallium arsenide; Impurities; MESFETs; Microwave FETs; Microwave frequencies; Schottky diodes; Switches;
Journal_Title :
Potentials, IEEE
