Test structure to investigate the series resistance components of source/drain structure

The source and drain (S/D) structure is a key element in scaling down the MOSFET for low-power applications below 0.25-μm dimensions. Here, we report on a simple test structure and show how more detailed information on the parasitic series resistance components of deep submicron devices can be obtained. Specifically, the dependence of the different resistance components on the process parameters like dose and energy of implantation, temperature treatment, spacer width, and silicide formation can be investigated with high accuracy.